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2SB1018A

Part Number	2SB1018A
Manufacturer	Toshiba Semiconductor
Description	TRANSISTOR
Published	Mar 12, 2008
Detailed Description	www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current S...
Datasheet	2SB1018A PDF File

Overview

www.
DataSheet4U.
com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.
0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ...

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