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AP9585J

Advanced Power Electronics
Part Number AP9585J
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published May 2, 2008
Detailed Description AP9585H/J Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast www.DataSheet4U.com Sw...
Datasheet PDF File AP9585J PDF File

AP9585J
AP9585J

Overview
AP9585H/J Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast www.
DataSheet4U.
com Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -80V 180mΩ -11.
2A Description The TO-252 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9585J) is available for low-profile applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -80 ±25 -11.
2 -7.
1 30 44.
6 0.
36 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
8 110 Units ℃/W ℃/W Data and specifications subject to change without notice 200302041 AP9585H/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=-250uA Min.
-80 -1 - Typ.
-0.
07 10 19 5 7 10 15 64 56 140 90 Max.
Units 180 200 -3 -1 -25 ±100 30 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance2 VGS=-10V, ID=-10A VGS=-4.
5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=150 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-80V, VGS=0V VDS=-64V, VGS=0V VGS= ±25V ID=-6A VDS=-64V VGS=-4.
5V VDS=-40V ID=-6A RG=3.
3Ω,VG...


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