DatasheetsPDF.com

AP9585GJ

Advanced Power Electronics
Part Number AP9585GJ
Manufacturer Advanced Power Electronics
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Sep 14, 2014
Detailed Description AP9585GH/J RoHS-compliant Product Advanced Power Electronics Corp. ▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fas...
Datasheet PDF File AP9585GJ PDF File

AP9585GJ
AP9585GJ

Overview
AP9585GH/J RoHS-compliant Product Advanced Power Electronics Corp.
▼ Lower Gate Charge ▼ Simple Drive Requirement ▼ Fast Switching Characteristic G S D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID -80V 180mΩ -11.
2A Description The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP9585GJ) is available for low-profile applications.
G D S G D S TO-252(H) TO-251(J) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current 1 Rating -80 +25 -11.
2 -7.
1 -30 44.
6 0.
36 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 2.
8 62.
5 110 Units ℃/W ℃/W ℃/W Maximum Thermal Resistance, Junction-ambient Data and specifications subject to change without notice 1 200810021 AP9585GH/J Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS RDS(ON) Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA VGS=-10V, ID=-10A VGS=-4.
5V, ID=-6A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current o Min.
-80 -1 - Typ.
10 19 5 7 10 15 64 56 140 90 Max.
Units 180 200 -3 -1 -25 +100 30 V mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF VDS=VGS, ID=-250uA VDS=-10V, ID=-6A VDS=-80V, VGS=0V VGS= +25V ID=-6A VDS=-64V VGS=-4.
5V VDS=-40V ID=-6A RG=3.
3Ω,VGS=-10V RD=6.
7Ω VGS=0V VDS=-25V f=1.
0MHz Drain-Source Leakage Current (T j=150 C) VDS=-64V, VGS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)