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K3767

Toshiba Semiconductor
Part Number K3767
Manufacturer Toshiba Semiconductor
Description 2SK3767
Published May 20, 2008
Detailed Description www.DataSheet4U.com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Reg...
Datasheet PDF File K3767 PDF File

K3767
K3767

Overview
www.
DataSheet4U.
com 2SK3767 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3767 Switching Regulator Applications • • • • Low drain-source ON resistance: RDS (ON) = 3.
3Ω (typ.
) High forward transfer admittance: |Yfs| = 1.
6S (typ.
) Low leakage current: IDSS = 100μA (VDS = 600 V) Enhancement mode: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum www.
DataSheet4U.
com Ratings (Ta = 25°C) Characteristics Symbol VDSS VDGR VGSS DC Pulse (Note 1) (Note 1) ID IDP PD EAS IAR EAR Tch Tstg Rating 600 600 ±30 2 5 25 93 2 Unit V V V A W mJ A 1: Gate 2: Drain 3: Source Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power...


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