DatasheetsPDF.com

AP60N03GP

Advanced Power Electronics
Part Number AP60N03GP
Manufacturer Advanced Power Electronics
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Published Aug 6, 2008
Detailed Description AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp. ▼ Low On-Resistance ▼ Fast Switching www.DataSheet...
Datasheet PDF File AP60N03GP PDF File

AP60N03GP
AP60N03GP

Overview
AP60N03GS/P Pb Free Plating Product Advanced Power Electronics Corp.
▼ Low On-Resistance ▼ Fast Switching www.
DataSheet4U.
com N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 13.
5mΩ 55A ▼ Simple Drive Requirement G S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-263 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters.
The through-hole version (AP60N03GP) is available for low-profile applications.
GD S TO-263(S) G D TO-220(P) Absolute Maximum Ratings Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, V GS @ 10V Continuous Drain Current, V GS @ 10V Pulsed Drain Current 1 Rating 30 ±20 55 35 215 62.
5 0.
5 -55 to 150 -55 to 150 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max.
Max.
Value 2.
0 62 Units ℃/W ℃/W Data & specifications subject to change without notice 201221041 AP60N03GS/P Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Test Conditions VGS=0V, ID=250uA Min.
30 1 - Typ.
0.
037 11.
5 18 30 22.
4 2.
7 14 7.
4 81 24 18 950 440 145 Max.
Units 13.
5 20 3 1 25 ±100 V V/℃ mΩ mΩ V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25 ℃, ID=1mA RDS(ON) www.
DataSheet4U.
com Static Drain-Source On-Resistance VGS=10V, ID=28A VGS=4.
5V, ID=22A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (T...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)