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SiHF730

Vishay Siliconix
Part Number SiHF730
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description Power MOSFET IRF730, SiHF730 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Co...
Datasheet PDF File SiHF730 PDF File

SiHF730
SiHF730

Overview
Power MOSFET IRF730, SiHF730 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 38 5.
7 22 Single 1.
0 D TO-220AB G S D G S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
TO-220AB IRF730PbF SiHF730-E3 IRF730 SiHF730 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 16 mH, Rg = 25 Ω, IAS = 5.
5 A (see fig.
12).
c.
ISD ≤ 5.
5 A, dI/dt ≤ 90 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 400 ± 20 5.
5 3.
5 22 0.
59 290 5.
5 7.
4 74 4.
0 - 55 to + 150 300d 10 1.
1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document...


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