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SiHF730S

Vishay
Part Number SiHF730S
Manufacturer Vishay
Description Power MOSFET
Published Nov 16, 2015
Detailed Description Power MOSFET IRF730S, SiHF730S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) ...
Datasheet PDF File SiHF730S PDF File

SiHF730S
SiHF730S

Overview
Power MOSFET IRF730S, SiHF730S Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 400 VGS = 10 V 38 5.
7 22 Single 1.
0 D D2PAK (TO-263) K G DS G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4.
It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.
0 W in a typical surface mount application.
ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free Note a.
See device orientation.
D2PAK (TO-263) SiHF730S-GE3 IRF730SPbF SiHF730S-E3 SiHF730S-E3 D2PAK (TO-263) SiHF730STRL-GE3a IRF730STRLPbFa SiHF730STL-E3a SiHF730STL-E3a ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Maximum Power Dissipation (PCB Mount)e Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM TC = 25 °C TA = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum...


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