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SiHF730AL

Vishay Siliconix
Part Number SiHF730AL
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.) () Qg (...
Datasheet PDF File SiHF730AL PDF File

SiHF730AL
SiHF730AL

Overview
IRF730AS, SiHF730AS, IRF730AL, SiHF730AL Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Max.
) () Qg (Max.
) (nC) 400 VGS = 10 V 22 Qgs (nC) 5.
8 Qgd (nC) 9.
3 Configuration Single 1.
0 D I2PAK (TO-262) D2PAK (TO-263) G DS G D S G S N-Channel MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Effective Coss Specified • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Sspeed Power Switching TYPICAL SMPS TOPOLOGIES • Single Transistor Flyback Xfmr.
Reset • Single Transistor Forward Xfmr.
Reset (Both US Line Input Only) ORDERING INFORMATION Package D2PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF730AS-GE3 Lead (Pb)-free IRF730ASPbF SiHF730AS-E3 Note a.
See device orientation.
D2PAK (TO-263) SiHF730ASTRL-GE3a IRF730ASTRLPbFa SiHF730ASTL-E3a D2PAK (TO-263) SiHF730ASTRR-GE3a IRF730ASTRRPbFa SiHF730ASTR-E3a I2PAK (TO-262) SiHF730AL-GE3 IRF730ALPbF SiHF730AL-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta, e Linear Derating Factor Single Pulse Avalanche Energyb, e Avalanche Currenta Repetiitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc, e VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
Starting TJ = 25 °C, L = 19 mH, Rg = 25 , IAS = 5.
5 A (see fig.
12).
c.
ISD  5.
5 A, dI/dt  90 A/μs, VDD  VDS, TJ  150 °C.
d.
1.
6 mm from case.
e.
Uses IRF730A, SiHF730A data...


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