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SiHF734

Vishay Siliconix
Part Number SiHF734
Manufacturer Vishay Siliconix
Description Power MOSFET
Published Dec 8, 2008
Detailed Description IRF734, SiHF734 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Conf...
Datasheet PDF File SiHF734 PDF File

SiHF734
SiHF734

Overview
IRF734, SiHF734 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration www.
DataSheet4U.
com VGS = 10 V 45 6.
6 24 Single D FEATURES 450 1.
2 • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free RoHS COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W.
The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
TO-220 G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free TO-220 IRF734PbF SiHF734-E3 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta TC = 25 °C Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 450 ± 20 4.
9 3.
1 20 0.
59 330 4.
9 7.
4 74 4.
0 - 55 to + 150 300d 10 1.
1 W/°C mJ A mJ W V/ns °C lbf · in N·m A UNIT V Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.
9 A (see fig.
12).
c.
ISD ≤ 4.
9 A, dI/dt ≤ 80 A/µs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
Document Number: 91049 S-Pending-Rev.
A, 19-Jun-08 WORK-IN-PROGRESS www.
vishay.
com 1 IRF734, SiHF734 Vishay Siliconix THERMAL RESISTANCE RATINGS PA...


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