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2SC5099

Part Number	2SC5099
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	Mar 10, 2009
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5099 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR...
Datasheet	2SC5099 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC5099 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= 80V(Min) ·Good Linearity of hFE ·Complement to Type 2SA1907 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A IB Base Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 3 A 60 W 150 ℃ Tstg...

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