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CMBTA42

CDIL
Part Number CMBTA42
Manufacturer CDIL
Description (CMBTA42 / CMBTA43) TRANSISTORS
Published Apr 20, 2009
Detailed Description Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Pa...
Datasheet PDF File CMBTA42 PDF File

CMBTA42
CMBTA42

Overview
Continental Device India Limited An www.
datasheet4u.
com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBTA42 CMBTA43 SILICON EPITAXIAL TRANSISTORS N–P–N transistors Marking CMBTA42 = 1D CMBTA43 = 1E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation up to Tamb = 25 °C Junction temperature D.
C.
current gain IC = 10 mA; VCE = 10 V Transition frequency at f = 35 MHz IC = 10 mA; VCE = 20 V Feedback capacitance at f = 1 MHz IC = 0; VCE = 20 V VCBO VCEO VEBO IC Ptot Tj hFE fT Cre CMBT A42 max.
300 max.
300 max.
max.
max.
max.
min.
min.
max.
3 A43 200 V 200 V V mA mW °C 6 500 250 150 40 50 MHz 4 pF Continental Device India Limited Data Sheet Page 1 of 3 www.
datasheet4u.
com CMBTA42 CMBTA43 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) VCBO Collector–emitter voltage (open base) VCEO Emitter–base voltage (open collector) VEBO Collector current (d.
c.
) IC Total power dissipation up to Tamb = 25 °C Ptot Storage temperature Tstg Junction temperature Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient max.
300 max.
300 max.
max.
max.
–55 max.
200 V 200 V 6 V 500 mA 250 mW to +150 °C 150 °C Rth j–a = 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage CMBTA42 V(BR)CEO min.
300 IC = 1 mA; IB = 0 Collector–base breakdown voltage V(BR)CBO min.
300 IC = 100 µA; IE = 0 Emitter–base breakdown voltage V(BR)EBO min.
IE = 100 µA; IC = 0 Collector cut–off current ICBO max.
0.
1 IE = 0; VCB = 200 V ICBO max.
– IE = 0; VCB = 160 V Emitter cut–off current IEBO max.
0.
1 IC = 0; VBE = 6 V IEBO max.
– IC = 0; VBE = 4 V Feedback capacitance at f...


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