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CMBTA56

CDIL
Part Number CMBTA56
Manufacturer CDIL
Description (CMBTA55 / CMBTA56) TRANSISTORS
Published Apr 20, 2009
Detailed Description www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 ...
Datasheet PDF File CMBTA56 PDF File

CMBTA56
CMBTA56

Overview
www.
datasheet4u.
com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA55 CMBTA56 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA55 = 2H CMBTA56 = 2G PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation up to Tamb = 25 °C D.
C.
current gain –IC = 100 mA; –VCE = 1 V Transition frequency at f = 100 MHz –IC = 100 mA; –VCE = 1 V Collector–emitter saturation voltage –IC = 100 mA; IB = 10 mA –V CBO –V CEO –V EBO –IC Ptot hFE fT VCEsat CMBT A55 max.
60 max.
60 max.
max.
A56 80 V 80 V V mA mW 4 500 250 100 50 0.
25 min.
min.
max.
MHz V Continental Device India Limited Data Sheet Page 1 of 3 www.
datasheet4u.
com CMBTA55 CMBTA56 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient –V CBO –V CEO –V EBO –IC Ptot Tstg Tj CMBT A55 max.
60 max.
60 max.
max.
max.
–55 max.
A56 80 V 80 V 4 V 500 mA 250 mW to +150 °C 150 °C Rth j–a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage CMBTA55 –V(BR)CEO min.
60 –IC = 1 mA; IB = 0 Emitter–base breakdown voltage –V(BR)EBO min.
–IC = 0; IE = 100 µA Collector cut–off current –I CEO max.
–VCE = 60 V; IB = 0 –I CBO max.
0.
1 –VCB = 60 V; IE = 0 –I CBO max.
–VCB = 80 V; IE = 0 Saturation voltages –V CEsat max.
–IC = 100 mA; –IB = 10 mA Base–emitter On voltage –VBE(on) max.
–IC = 100 mA; –VCE = 1 V D.
C.
current gain h...


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