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CMBTA92

CDIL
Part Number CMBTA92
Manufacturer CDIL
Description (CMBTA92 / CMBTA93) TRANSISTORS
Published Apr 20, 2009
Detailed Description www.datasheet4u.com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 ...
Datasheet PDF File CMBTA92 PDF File

CMBTA92
CMBTA92


Overview
www.
datasheet4u.
com Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN m m Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation up to Tamb = 25 °C D.
C.
current gain –IC = 10 mA; –VCE = 10 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V Collector–base capacitance at f = 1 MHz IE = 0; –VCB = 20 V –V CBO –V CEO –V EBO –IC Ptot hFE fT C cb CMBT A92 max.
300 max.
300 max.
max.
A93 200 V 200 V V mA mW 5 500 250 40 50 min.
min.
max.
6 MHz 8 pF Continental Device India Limited Data Sheet Page 1 of 3 www.
datasheet4u.
com CMBTA92 CMBTA93 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.
c.
) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient –V CBO –V CEO –VEBO –IC Ptot Tstg Tj CMBT A92 max.
300 max.
300 max.
max.
max –55 max.
A93 200 V 200 V 5 V 500 mA 250 mW to +150 °C 150 °C Rth j–a 500 K/W CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min.
–IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min.
–IC = 100 µA; IE = 0 Collector cut–off current –I CBO max.
–VCB = 200 V; IE = 0 –I CBO max.
–VCB = 160 V; IE = 0 Emitter–base breakdown voltage –V(BR)EBO min.
–IE = 100 µA; IC = 0 Emitter cut–off current –I EBO max.
IC = 0; –VBE = 3 V; Collector–base capacitance at f= 1 MHz Ccb max.
IE = 0; –VCB...



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