DatasheetsPDF.com

LET9006

Part Number	LET9006
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Published	Mar 22, 2005
Detailed Description	LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERA...
Datasheet	LET9006 PDF File

Overview

LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 6 W with 17 dB gain @ 960 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION • SUPPLIED IN TAPE & REEL OF 3K UNITS PowerFLAT™(5x5) ORDER CODE LET9006 BRANDING 9006 DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 1 GHz.
LET9006 boasts the excellent gain, linearity and reliability of ...

Similar Datasheet

LET9002 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package - STMicroelectronics
LET9006 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package - STMicroelectronics
LET9045 RF power transistor - ST Microelectronics
LET9045C RF power transistor - ST Microelectronics
LET9045S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package - STMicroelectronics
LET9060C RF POWER TRANSISTORS Ldmos Enhanced Technology - STMicroelectronics
LET9060S RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package - STMicroelectronics
LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology - STMicroelectronics

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)