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LET9085

STMicroelectronics
Part Number LET9085
Manufacturer STMicroelectronics
Description RF POWER TRANSISTORS Ldmos Enhanced Technology
Published Mar 22, 2005
Detailed Description LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 C...
Datasheet PDF File LET9085 PDF File

LET9085
LET9085

Overview
LET9085 RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • IS-95 CDMA PERFORMANCES POUT = 20 W EFF.
= 28 % • EDGE PERFORMANCES POUT = 35 W EFF.
= 35 % • GSM PERFORMANCES POUT = 75 W EFF.
= 55 % • EXCELLENT THERMAL STABILITY • BeO FREE PACKAGE • INTERNAL INPUT MATCHING • ESD PROTECTION PIN CONNECTION 1 M265 epoxy sealed ORDER CODE LET9085 BRANDING LET9085 DESCRIPTION The LET9085 is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 1.
0 GHz.
The LET9085 is designed for high gain and broadband performance operating in common source mode at 26 V.
Its internal matching makes it ideal for base station applications requiring high linearity.
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max.
Operating Junct...


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