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2SD2230

NEC
Part Number 2SD2230
Manufacturer NEC
Description NPN Transistor
Published Sep 22, 2009
Detailed Description '$7$ 6+((7 www.DataSheet4U.com 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 )25 /2:)5(48(1&< 32:(5 $0...
Datasheet PDF File 2SD2230 PDF File

2SD2230
2SD2230

Overview
'$7$ 6+((7 www.
DataSheet4U.
com 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 )25 /2:)5(48(1&< 32:(5 $03/,),(56 The 2SD2230 is an element realizing ultra low VCE(sat).
This transistor is ideal for muting such as stereo recorders, VCRs, and TVs.
PACKAGE DRAWING (UNIT: mm) FEATURES • Low VCE(sat): VCE(sat)1 = 33 mV TYP.
@IC = 100 mA, IB = 10 mA VCE(sat)2 = 150 mV TYP.
@IC = 500 mA, IB = 20 mA • High hFE and high current QUALITY GRADES • Standard Please refer to “Quality Grades on NEC Semiconductor Devices” (Document No.
C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ID(DC) PT Tj Tstg Ratings 16 16 5 500 200 150 −55 to +150 Unit V V V mA mW °C °C Electrode connection 1.
Emitter (E) 2.
Base (B) 3.
Collector (C) Marking: D46 The information in this document is subject to change without notice.
Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country.
Please check with local NEC representative for availability and additional information.
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DataSheet4U.
com ELECTRICAL CHARACTERISTICS (Ta = 25°C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC base voltage Collector saturation voltage Collector saturation voltage Output capacitance Gain bandwidth product Symbol ICBO IEBO hFE1* hFE2* VBE* VCE(sat)1 VCE(sat)2 Cob fT Conditions VCB = 16 V, IE = 0 VEB = 6.
0 V, IC = 0 VCE = 1.
0 V, IC = 100 mA VCE = 1.
0 V, IC = 500 mA VCE = 1.
0 V, IC = 10 mA IC = 100 mA, IB = 10 mA IC = 500 mA, IB = 20 mA VCB = 10 V, IE = 0, f = 1.
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