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2SD2236

Part Number	2SD2236
Manufacturer	Inchange Semiconductor
Description	Power Transistor
Published	Sep 22, 2009
Detailed Description	www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCR...
Datasheet	2SD2236 PDF File

Overview

www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.
) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w s c s i .
w VALUE 100 V 100 V 5 V 5 A 60 W UNIT n c .
i m e IC Collector Current-Continuous PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.
iscsemi.
cn www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2236 TYP.
MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 IC= 50μ...

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