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MP4TD0800

M-pulse Microwave
Part Number MP4TD0800
Manufacturer M-pulse Microwave
Description Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Ty...
Datasheet PDF File MP4TD0800 PDF File

MP4TD0800
MP4TD0800

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.
5 dB Typical Gain @ 0.
1 GHz 18.
5 dB Typical Gain @ 1.
0 GHz • Low Noise Figure: 3.
2 dB Typical @ 1.
0 Ghz • Unconditionally Stable (k>1) MP4TD0800 Chip Outline Drawing1,2,3,4 RF Input Description M-Pulse's MP4TD0800 is a high performance silicon bipolar MMIC chip.
The MP4TD0800 is designed for use where a low noise (3.
2 dB typical) general purpose 50Ω gain block is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0800 is fabricated using a 10 GHz f T silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
35 30 25 GAIN (dB) 20 15 10 5 0 0.
1 1 F R E Q U E N C Y (G H z) 10 Id= 3 6m A 375 µ (14.
8 mil) Ground Optional RF Output & +7.
8 Volt 375 µ (14.
8 mil) TYPICAL POWER GAIN vs FREQUENCY Notes: (unless otherwise specified) 1.
Chip Thickness is 120 µ m; 4.
8 mils 2.
Bond Pads are 40 µ m; 1.
6 mils typical in diameter 3.
RF Output Contact & +DC Voltage Is Normally Made On Backside Of Chip At Die Attach 4.
Tolerance:µ m .
xx = ±.
13; mil .
x = ±.
5 Ordering Information Model No.
MP4TD0800G MP4TD0800W Package Gel Pack Waffle Pack www.
DataSheet4U.
com Electrical Specifications @ T A = +25°C, Id = 36 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (S212) f = 0.
1 GHz f = 1.
0 GHz f = 4.
0 GHz SWRin Input SWR f = 0.
3 to 3.
0 GHz SWRout Output SWR f = 0.
4 to 3.
0 GHz P1dB Output Power @ 1 dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient - Units dB dB dB dBm dB dBm ps V mV/°C Min.
7.
0 - Typ.
32.
5 18.
5 7.
0 2.
0 1.
7 14.
0 3.
2 27.
0 125 7.
8 -17.
0 Max.
8.
4 - Specification Subject to Change Without Notice M/A-COM, Inc.
Specification Subject to Change Without Notice M...


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