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MP4TD0835

M-pulse Microwave
Part Number MP4TD0835
Manufacturer M-pulse Microwave
Description (MP4TD0835 / MP4TD0836) Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Ty...
Datasheet PDF File MP4TD0835 PDF File

MP4TD0835
MP4TD0835

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.
5 dB Typical Gain @ 0.
1 GHz 18.
5 dB Typical Gain @ 1.
0 GHz • Low Noise Figure: 3.
2 dB Typical @ 1.
0 GHz • Cost Effective Ceramic Microstrip Package • Tape and Reel Packaging Available • Unconditionally Stable @ k>1 Description M-Pulse's MP4TD0835 and MP4TD0836 are high performance silicon bipolar MMIC housed in a cost effective ceramic microstrip package.
The MP4TD0835 and MP4TD0836 are designed for use where a low noise (3.
2 dB typical) general purpose 50Ω gain block is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0835 and MP4TD0836 are fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY 35 30 Id= 3 6 m A 25 20 15 MP4TD0835, MP4TD0836 Ceramic Microstrip Package Outline1,2,3 Available in short lead version as MP4TD0836.
4 .
085 2,16 RF INPUT 1 RF OUT AND BIAS 3 .
020 0,51 GND 2 GND .
100 2,55 ø .
083 2,11 .
057 1,45 .
006 ±.
002 0,15±0,05 .
455 ±.
030 1,56 ±0,76 MA4TD0835 0.
018 ±0.
010 4,57 ±0,25 MA4TD0836 .
022 0,56 Notes: (unless otherwise specified) 1.
Dimensions are in / mm 2.
Tolerance: in .
xxx = ±.
005; mm .
xx = ±.
13 3.
See last page of data sheet for short lead Micro-X 10 www.
DataSheet4U.
com 5 0 0 .
1 1 F R E Q U E N C Y (G H z) 10 Pin Configuration Pin Number Pin Description 1 RF Input 2&4 AC/DC Ground 3 RF Output and DC Bias Electrical Specifications @ TA = +25°C, Id = 36 mA, Z0 = 50 Ω Symbol Parameters Test Conditions Gp Power Gain (⏐S21⏐2) f = 0.
1 GHz f = 1.
0 GHz f = 4.
0 GHz SWRin Input SWR f = 0.
3 to 3.
0 GHz SWRout Output SWR f = 0.
4 to 3.
0 GHz P1 dB Output Power @ 1 dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Volt...


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