DatasheetsPDF.com

MP4TD0870

M-pulse Microwave
Part Number MP4TD0870
Manufacturer M-pulse Microwave
Description Silicon Bipolar MMIC Cascadable Amplifier
Published Nov 11, 2009
Detailed Description M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.5 dB Ty...
Datasheet PDF File MP4TD0870 PDF File

MP4TD0870
MP4TD0870

Overview
M-Pulse Microwave Silicon Bipolar MMIC Cascadable Amplifier Features • Cascadable 50Ω Gain Block • High Gain: 32.
5 dB Typical Gain @ 0.
1 GHz 18.
5 dB Typical Gain @ 1.
0 GHz • Low Noise Figure: 3.
2 dB Typical @ 1.
0 GHz • Cost Effective Ceramic Microstrip Package • Tape and Reel Packaging Available • Unconditionally Stable (k>1) Description M-Pulse's MP4TD0870 is a high performance silicon bipolar MMIC housed in a hermetic high reliability package.
The MP4TD0870 is useful where a general purpose 50Ω gain block with low (3.
2 dB typical) noise figure is required.
Typical applications include narrow and wide band IF and RF amplifiers in industrial and military applications.
The MP4TD0870 is fabricated using a 10 GHz fT silicon bipolar technology that features gold metalization and IC passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY 35 30 Id=36m A 25 GAIN (dB) 20 15 10 .
040 1,02 MP4TD0870 Gold-Ceramic Microstrip Package Outline1,2 4 GND RF INPUT 1 RF OUT AND BIAS 3 .
020 0,51 2 GND .
070 .
004 ±.
002 0,1±0,05 1,78 .
035 0,89 .
495 ±.
030 12,57 ±0,76 Notes: (unless otherwise specified) 1.
Dimensions are in / mm 2.
Tolerance: in .
xxx = ±.
005; mm .
xx = ±.
13 Pin Configuration Pin Number Pin Description 1 RF Input 2&4 AC/DC Ground 3 RF Output and DC Bias Ordering Information Model No.
MP4TD0870 MP4TD0870T www.
DataSheet4U.
com 5 0 0.
1 1 FR E QU E N C Y (G H z) 10 Package Ceramic Tape and Reel Electrical Specifications @ TA = +25°C, Id = 36 mA, Z0 = 50Ω Symbol Parameters Test Conditions Gp Power Gain (⏐S21⏐2) f = 0.
1 GHz f = 1.
0 GHz f = 4.
0 GHz SWRin Input SWR f = 0.
3 to 3.
0 GHz SWRout Output SWR f = 0.
4 to 3.
0 GHz P1dB Output Power @ 1 dB Gain Compression f = 1.
0 GHz NF f = 1.
0 GHz 50 Ω Noise Figure IP3 Third Order Intercept Point f = 1.
0 GHz tD Group Delay f = 1.
0 GHz Vd Device Voltage dV/dT Device Voltage Temperature Coefficient - Units dB dB dB dBm dB dBm ps V mV/°C Min.
17.
5 7.
0 - Typ.
32.
5 18.
5 7.
0 2.
0 1.
5 12.
5 3.
2 27.
0 125 7...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)