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SG50N06T

Sirectifier Semiconductors
Part Number SG50N06T
Manufacturer Sirectifier Semiconductors
Description Discrete IGBTs
Published Dec 4, 2009
Detailed Description SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26...
Datasheet PDF File SG50N06T PDF File

SG50N06T
SG50N06T

Overview
SG50N06T, SG50N06DT Discrete IGBTs Dimensions TO-247AD Dim.
A B Millimeter Min.
Max.
19.
81 20.
32 20.
80 21.
46 15.
75 16.
26 3.
55 3.
65 4.
32 5.
4 1.
65 1.
0 10.
8 4.
7 0.
4 1.
5 5.
49 6.
2 2.
13 4.
5 1.
4 11.
0 5.
3 0.
8 2.
49 Inches Min.
Max.
0.
780 0.
819 0.
610 0.
140 0.
170 0.
212 0.
065 0.
040 0.
426 0.
185 0.
016 0.
087 0.
800 0.
845 0.
640 0.
144 0.
216 0.
244 0.
084 0.
177 0.
055 0.
433 0.
209 0.
031 0.
102 C(TAB) E C G G=Gate, C=Collector, E=Emitter,TAB=Collector C D E F G H J K L M N SG50N06T SG50N06DT Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA o o Test Conditions TJ=25 C to 150 C TJ=25oC to 150oC; RGE=1 M ; Continuous Transient TC=25oC TC=90oC TC=25oC, 1 ms Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM=100 @ 0.
8 VCES 300 -55.
.
.
+150 150 -55.
.
.
+150 300 Unit V V A A W o VGE=15V; TVJ=125oC; RG=10 (RBSOA) Clamped inductive load PC TC=25oC TJ TJM Tstg www.
DataSheet4U.
com Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10s Md Weight Mounting torque C o C 1.
13/10 6 Nm/Ib.
in.
g (TJ=25oC, unless otherwise specified) Symbol BVCES VGE(th) ICES IGES VCE(sat) Test Conditions IC=250uA; VGE=0V IC=250uA; VCE=VGE VCE=0.
8VCES; VGE=0V; IC=IC90; VGE=15 TJ=25 C TJ=125 C o o Characteristic Values min.
600 2.
5 5.
0 200 1 ±100 2.
5 typ.
max.
Unit V V uA mA nA V VCE=0V; VGE=±20V SG50N06T, SG50N06DT Discrete IGBTs (TJ=25oC, unless otherwise specified) Symbol Test Conditions Characteristic Values min.
gts IC=IC90; VCE=10V Pulse test, t Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi www.
DataSheet4U.
com Unit typ.
35 max.
S 25 2% 300us, duty cycle 4000 VCE=25V; VGE=0V; f=1MHz 340 100 110 IC=IC90; VGE=15V; VCE=0.
5VCES o pF 180 50 100 ns ns 300 270 6.
0 ns ns mJ ns ns mJ ns ns mJ 0.
62 K/W K/W nC 30 40 Inductive load, TJ=25 C IC=IC90; VGE=15V VCE=0.
8VCES; RG=Roff=2.
7 Remarks:Switching times may increase for VCE(Clamp) 0.
8VCES' higher TJ or increased RG Inductive load, TJ=25 C IC=IC90; VGE=15V VCE=0.
8VCES; RG=Roff=2.
7 Remarks:Switching times may ...


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