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SSG4503A

SeCoS Halbleitertechnologie GmbH
Part Number SSG4503A
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description Elektronische Bauelemente Enhancement Mode Power Mos.FET RoHS Compliant Product N Channel 8.3A, 30V,RDS(ON) 20m£[ P Ch...
Datasheet PDF File SSG4503A PDF File

SSG4503A
SSG4503A

Overview
Elektronische Bauelemente Enhancement Mode Power Mos.
FET RoHS Compliant Product N Channel 8.
3A, 30V,RDS(ON) 20m£[ P Channel -7.
1A, -30V,RDS(ON) 28m£[ SSG4503A SOP-8 Description 0.
40 0.
90 0.
19 0.
25 The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
45 6.
20 5.
80 0.
25 o 0.
375 REF 3.
80 4.
00 4.
80 5.
00 0.
10~0.
25 Features * Simple Drive Requirement * Lower On-Resistance 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4503ASS G1 G2 1 S1 2 G1 3 S2 4 G2 S1 S2 Absolute Maximum Ratings www.
DataSheet4U.
com Parameter Symbol VDS VGS 30 ±20 o Ratings -30 ±20 -7.
1 -5.
7 -30 2.
0 0.
016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 8.
3 6.
7 30 T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 7 Elektronische Bauelemente Enhancement Mode Power Mos.
FET N Channel 8.
3A, 30V,RDS(ON) 20m£[ P Channel -7.
1A, -30V,RDS(ON) 28m£[ SSG4503A Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C ) Static Drain-Source On-Resistance 2 o o Unless otherwise specified) Typ.
_ Symbol BVDSS BVDS/ Tj VGS(th...


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