DatasheetsPDF.com

SSG4501

SeCoS Halbleitertechnologie GmbH
Part Number SSG4501
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m£[ P Channel -5.3A, -30V,RDS(ON) 50m £[ SSG4501 Enhancement Mo...
Datasheet PDF File SSG4501 PDF File

SSG4501
SSG4501

Overview
Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m£[ P Channel -5.
3A, -30V,RDS(ON) 50m £[ SSG4501 Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description 0.
40 0.
90 0.
19 0.
25 The SSG4501 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
45 6.
20 5.
80 0.
25 o 0.
375 REF 3.
80 4.
00 4.
80 5.
00 0.
10~0.
25 Features * Simple Drive Requirement * Lower On-resistance 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4501SS G1 S1 G2 1 S1 2 G1 3 S2 4 G2 S2 Absolute Maximum Ratings www.
DataSheet4U.
com Parameter Symbol VDS VGS 30 ±20 o Ratings -30 ±20 -5.
3 -4.
7 -20 2.
0 0.
016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 7 5.
8 20 T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev.
A Page 1 of 9 Elektronische Bauelemente N Channel 7A, 30V,RDS(ON) 28m£[ P Channel -5.
3A, -30V,RDS(ON) 50m £[ SSG4501 Enhancement Mode Power Mos.
FET Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) Drain-Source Leakage Current (Tj=70 C ) Static Drain-Source On-Resistance2 o o Unless otherwise specified) Typ.
_ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDS...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)