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SSG4505

SeCoS Halbleitertechnologie GmbH
Part Number SSG4505
Manufacturer SeCoS Halbleitertechnologie GmbH
Description Enhancement Mode Power MOSFET
Published Dec 28, 2009
Detailed Description Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mo...
Datasheet PDF File SSG4505 PDF File

SSG4505
SSG4505

Overview
Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.
4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mode Power Mos.
FET RoHS Compliant Product SOP-8 Description 0.
40 0.
90 0.
19 0.
25 The SSG4505 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The SOP-8 package is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters.
0.
35 0.
49 1.
27Typ.
45 6.
20 5.
80 0.
25 o 0.
375 REF 3.
80 4.
00 4.
80 5.
00 0.
10~0.
25 Features * Simple Drive Requirement * Lower On-Resistance 0 o 8 o 1.
35 1.
75 Dimensions in millimeters D1 8 D1 7 D2 6 D2 5 D1 D2 * Fast Switching Performance Date Code 4505SS G2 G1 S1 S2 1 S1 2 G1 3 S2 4 G2 Absolute Maximum Ratings www.
DataSheet4U.
com Parameter Symbol VDS VGS 30 ±20 o Ratings -30 ±20 -8.
4 -6.
7 -30 2.
0 0.
016 Unit V V A A A W W/ C o o Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o 10 7.
9 30 3 T otal Power Dissipation Linear Derating Factor O perating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max.
Rthj-a Ratings 62.
5 o Unit C /W http://www.
SeCoSGmbH.
com/ Any changing of specification will not be informed individual 01-Jan-2008 Rev.
B Page 1 of 7 Elektronische Bauelemente N Channel 10A, 30V,RDS(ON) 14m£[ P Channel -8.
4A, -30V,RDS(ON) 20m£[ SSG4505 Enhancement Mode Power Mos.
FET Electrical Characteristics N Channel( Tj=25 C Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25oC) o Unless otherwise specified) Typ.
_ Symbol BVDSS BVDS/ Tj VGS(th) IGSS IDSS Min.
30 _ Max.
_ _ Unit V V/oC V nA uA uA Test Condition VGS=0V, ID=2...


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