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RJH60D7DPK

Renesas Technology
Part Number RJH60D7DPK
Manufacturer Renesas Technology
Description IGBT
Published Feb 18, 2010
Detailed Description Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.4.00 Apr 19, 2012 Featur...
Datasheet PDF File RJH60D7DPK PDF File

RJH60D7DPK
RJH60D7DPK

Overview
Preliminary Datasheet RJH60D7DPK 600V - 50A - IGBT Application: Inverter R07DS0165EJ0400 Rev.
4.
00 Apr 19, 2012 Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) C 12 3 1.
Gate G 2.
Collector 3.
Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Dio...


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