DatasheetsPDF.com

RJH60D7DPM

Renesas
Part Number RJH60D7DPM
Manufacturer Renesas
Description IGBT
Published Jul 20, 2012
Detailed Description Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s ...
Datasheet PDF File RJH60D7DPM PDF File

RJH60D7DPM
RJH60D7DPM

Overview
Preliminary Datasheet RJH60D7DPM 600V - 50A - IGBT Application: Inverter Features  Short circuit withstand time (5 s typ.
)  Low collector to emitter saturation voltage VCE(sat) = 1.
6 V typ.
(at IC = 50 A, VGE = 15 V, Ta = 25°C)  Built in fast recovery diode (100 ns typ.
) in one package  Trench gate and thin wafer technology  High speed switching tf = 50 ns typ.
(at VCC = 300 V, VGE = 15 V, IC = 50 A, Rg = 5 , Ta = 25°C, inductive load) R07DS0176EJ0300 Rev.
3.
00 Apr 19, 2012 Outline RENESAS Package code: PRSS0003ZA-A (Package name: TO-3PFM) C G 1.
Gate 2.
Collector 3.
Emitter E www.
DataSheet.
net/ 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector to emitter diode forward current Collector to emitter diode forward peak current Collector dissipation Junction to case thermal resistance (IGBT) Junction to case thermal resistance (Di...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)