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TSM4N60

Taiwan Semiconductor Company
Part Number TSM4N60
Manufacturer Taiwan Semiconductor Company
Description 600V N-Channel Power MOSFET
Published Mar 5, 2010
Detailed Description TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. S...
Datasheet PDF File TSM4N60 PDF File

TSM4N60
TSM4N60

Overview
TSM4N60 600V N-Channel Power MOSFET TO-220 ITO-220 TO-251 (IPAK) TO-252 (DPAK) Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 600 2.
5 @ VGS =10V ID (A) 2 General Description The TSM4N60 is produced using advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
There devices are well suited for high efficiency switch mode power supplies, active power factor correction, electronic lamp ballasts base on half bridge topology.
Features ● Robust high voltage termination ● Avalanche energy specified ● Diode is characterized for use in bridge ci...


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