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TSM4N90

Taiwan Semiconductor
Part Number TSM4N90
Manufacturer Taiwan Semiconductor
Description N-Channel Power MOSFET
Published Jul 10, 2014
Detailed Description TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) R...
Datasheet PDF File TSM4N90 PDF File

TSM4N90
TSM4N90

Overview
TSM4N90 900V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1.
Gate 2.
Drain 3.
Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 900 4 @ VGS =10V ID (A) 4 General Description The TSM4N90 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge.
Features ● ● ● Low RDS(ON) 4Ω (Max.
) Low gate charge typical @ 25nC (Typ.
) Improve dv/dt capability Block Diagram Ordering Information Part No.
TSM4N90CZ C0 Package TO-220 Packing 50pcs / Tube TSM4N90CI C0G ITO-220 50pcs / Tube Note: “G” denote for Halogen Free Product N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage ...


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