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APT100GT60JR

Advanced Power Technology
Part Number APT100GT60JR
Manufacturer Advanced Power Technology
Description Thunderbolt IGBT
Published Mar 30, 2010
Detailed Description TYPICAL PERFORMANCE CURVES ® APT100GT60JR 600V www.DataSheet4U.com APT100GT60JR Thunderbolt IGBT® The Thunderblot IGBT...
Datasheet PDF File APT100GT60JR PDF File

APT100GT60JR
APT100GT60JR

Overview
TYPICAL PERFORMANCE CURVES ® APT100GT60JR 600V www.
DataSheet4U.
com APT100GT60JR Thunderbolt IGBT® The Thunderblot IGBT® is a new generation of high voltage power IGBTs.
Using Non- Punch Through Technology, the Thunderblot IGBT® offers superior ruggedness and ultrafast switching speed.
• Low Forward Voltage Drop • Low Tail Current • RBSOA and SCSOA Rated • High Freq.
Switching to 80KHz • Ultra Low Leakage Current E G C E S OT 22 7 ISOTOP ® "UL Recognized" file # E145592 C G E MAXIMUM RATINGS Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25°C Continuous Collector Current @ TC = 100°C Pulsed Collector Current 1 All Ratings: TC = 25°C unless otherwise specified.
APT100GT60JR UNIT Volts 600 ±30 148 80 300 300A @ 600V 500 -55 to 150 300 Amps Switching Safe Operating Area @ TJ = 150°C Total Power Dissipation Operating and Storage Junction Temperature Range Max.
Lead Temp.
for Soldering: 0.
063" from Case for 10 Sec.
Watts °C STATIC ELECTRICAL CHARACTERISTICS Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 4mA) Gate Threshold Voltage (VCE = VGE, I C = 1.
5mA, Tj = 25°C) MIN TYP MAX Units 600 3 1.
7 4 2.
1 2.
5 25 2 5 2.
5 Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 25°C) Collector-Emitter On Voltage (VGE = 15V, I C = 100A, Tj = 125°C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25°C) 2 Volts CAUTION: These Devices are Sensitive to Electrostatic Discharge.
Proper Handling Procedures Should Be Followed.
APT Website - http://www.
advancedpower.
com 052-6274 Rev A I GES Gate-Emitter Leakage Current (VGE = ±30V) 300 nA 4-2006 I CES Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125°C) µA TBD DYNAMIC CHARACTERISTICS Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 Eoff td(on) tr td(off) tf Eon1 Eon2 Eoff tr Characteristic Input Capacitan...


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