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IXTP1N80

IXYS
Part Number IXTP1N80
Manufacturer IXYS
Description High Voltage MOSFET
Published Apr 28, 2010
Detailed Description www.DataSheet4U.com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 I...
Datasheet PDF File IXTP1N80 PDF File

IXTP1N80
IXTP1N80

Overview
www.
DataSheet4U.
com High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated Preliminary Data IXTA 1N80 IXTP 1N80 IXTY 1N80 VDSS ID25 RDS(on) = 800 V = 750 mA = 11 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM Maximum Ratings 800 800 ± 20 ± 30 750 3 1.
0 V V V V mA A A mJ mJ V/ns W °C °C °C TO-220AB (IXTP) GD S D (TAB) TO-263 AA (IXTA) TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 47 Ω TC = 25°C 5 100 3 40 -55 .
.
.
+150 150 -55 .
.
.
+150 G S D (TAB) TO-252 AA (IXTY) G S D (TAB) Mounting torque TO-220 TO-252 TO-263 1.
13/10 Nm/lb.
in.
4 0.
8 3 300 g g g °C G = Gate, S = Source, D = Drain, TAB = Drain Features Maximum lead temperature for soldering 1.
6 mm (0.
062 in.
) from case for 10 s Symbol Test Conditions ! International standard packages ! High voltage, Low RDS (on) HDMOSTM process Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
800 2.
5 4.
5 ±100 TJ = 25°C TJ = 125°C 9.
5 25 500 11 V V nA µA µA Ω ! Rugged polysilicon gate ! Fast switching times Applications cell structure VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 25 µA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V ! Switch-mode ! ! DC choppers ! High frequency Advantages and resonant-mode power supplies Flyback inverters matching VGS = 10 V, ID = 500 mA Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % ! Space savings ! High power density DS98822C(11/03) © 2003 IXYS All rights reserved IXTP 1N80 IXTA 1N80 IXTY 1N80 www.
DataSheet4U.
com Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min.
typ.
max.
0.
7 0.
8 220 VGS = 0 V, VDS = 25 V, f = 1 MHz 23 4 11 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 1A RG = 47Ω, (External) 19 40 28 8.
5 VGS = 10 V, VDS = 0.
5 • VDSS, ID = 1A 2.
5 4.
5 3.
1 (IXTP) 0.
50 S pF pF pF ns ...


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