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STB200N04

STMicroelectronics
Part Number STB200N04
Manufacturer STMicroelectronics
Description Power MOSFET
Published Jun 5, 2010
Detailed Description STB200N04 N-channel 40V - 0.0035Ω - 120A - D2PAK Planar STripFET™ Power MOSFET General features Type STB200N04 ■ VDSS 4...
Datasheet PDF File STB200N04 PDF File

STB200N04
STB200N04

Overview
STB200N04 N-channel 40V - 0.
0035Ω - 120A - D2PAK Planar STripFET™ Power MOSFET General features Type STB200N04 ■ VDSS 40V RDS(on) <0.
0040Ω ID 120A Pw 300W 100% avalanche tested drive 1 3 www.
DataSheet4U.
com ■ Standard threshold Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size™” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
this new improved device has been specifically designed for automotive applications.
D²PAK Internal schematic diagram Applications ■ Switching application – Automotive Order codes Part number STB200N04 Marking B200N04 Package D²PAK Packaging Tape & reel November 2006 Rev 1 1/13 www.
st.
com 13 Contents STB200N04 Contents 1 2 Electrical ratings .
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3 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 4 www.
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com Test circuit .
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8 Package mechanical data .
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9 Packaging mechanical data .
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11 Revision history .
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12 5 6 2/13 STB200N04 Electrical ratings 1 Electrical ratings Table 1.
Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Total dissipation at TC = 25°C Derating factor Value 40 ±20 120 120 480 300 2.
0 862 4.
2 -55 to 175 Unit V V A A A W W/°C mJ V/ns °C ID (1)...


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