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2SK3907

Toshiba Semiconductor
Part Number 2SK3907
Manufacturer Toshiba Semiconductor
Description N-Channel MOSFET
Published Jul 7, 2010
Detailed Description www.DataSheet4U.com 2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3907 Switc...
Datasheet PDF File 2SK3907 PDF File

2SK3907
2SK3907

Overview
www.
DataSheet4U.
com 2SK3907 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACHII π-MOSVI) 2SK3907 Switching Regulator Applications • • • • • Small gate charge: Qg = 60 nC (typ.
) Low drain-source ON resistance: RDS (ON) = 0.
18 Ω (typ.
) High forward transfer admittance: |Yfs| = 12 S (typ.
) Low leakage current: IDSS = 500 μA (VDS = 500 V) Enhancement model: Vth = 2.
0 to 4.
0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 23 92 150 552 23 15 150 -55 to 150...


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