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H57V2582GTR

Hynix Semiconductor
Part Number H57V2582GTR
Manufacturer Hynix Semiconductor
Description 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O
Published Sep 23, 2010
Detailed Description www.DataSheet4U.com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell A...
Datasheet PDF File H57V2582GTR PDF File

H57V2582GTR
H57V2582GTR

Overview
www.
DataSheet4U.
com 256Mb Synchronous DRAM based on 8M x 4Bank x8 I/O 256M (32Mx8bit) Hynix SDRAM Memory Memory Cell Array - Organized as 4banks of 8,388,608 x 8 This document is a general product description and is subject to change without notice.
Hynix does not assume any responsibility for use of circuits described.
No patent licenses are implied.
Rev 1.
0 / Aug.
2009 1 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.
DataSheet4U.
com 111 Document Title 256Mbit (32M x8) Synchronous DRAM Revision History Revision No.
0.
1 1.
0 History Preliminary Release Draft Date Jun.
2009 Aug.
2009 Remark Rev 1.
0 / Aug.
2009 2 Synchronous DRAM Memory 256Mbit H57V2582GTR Series www.
DataSheet4U.
com 111 DESCRIPTION The Hynix H57V2582GTR Synchronous DRAM is 268,435,456bit CMOS Synchronous DRAM, ideally suited for the consumer memory applications which requires large memory density and high bandwidth.
It is organized as 4banks of 8,388,608 x 8 I/O.
Synchronous DRAM is a type of DRAM w...


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