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B1018A

Toshiba
Part Number B1018A
Manufacturer Toshiba
Description 2SB1018A
Published Sep 24, 2010
Detailed Description www.DataSheet4U.com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current...
Datasheet PDF File B1018A PDF File

B1018A
B1018A

Overview
www.
DataSheet4U.
com 2SB1018A TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SB1018A High Current Switching Applications Power Amplifier Applications Unit: mm • • • High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.
5 V (max) (IC = −4 A) Complementary to 2SD1411A Absolute Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.
0 30 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA TOSHIBA ― ― 2-10R1A Weight: 1.
7 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-21 www.
DataSheet4U.
com 2SB1018A Electrical Characteristics (Tc = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CEO hFE (1) DC current gain (Note) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time VCE (sat) VBE (sat) fT Cob ton 20 μs Switching time Storage time tstg Input IB2 Test Condition VCB = −100 V, IE = 0 VEB = −5 V, IC = 0 IC = −50 mA, IB = 0 VCE = −1 V, IC = −1 A VCE = −1 V, IC = −4 A IC = −4 A, IB = −0.
4 A IC = −4 A, IB = −0.
4 A VCE = −4 V, IC = −1 A VCB = −10 V, ...


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