DatasheetsPDF.com

B1016A

Part Number	B1016A
Manufacturer	Toshiba
Description	2SB1016A
Published	May 31, 2015
Detailed Description	TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown...
Datasheet	B1016A PDF File

Overview

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2.
0 V (max) • Complementary to 2SD1407A Absolute Maximum Ratings (Tc = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −100 V Collector-emitter voltage VCEO −100 V Emitter-base voltage VEBO −5 V Collector current IC −5 A Base current IB −0.
5 A Collector power dissipation (Tc = 25°C) PC 30 W JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-10R1A Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in Weight: 1.
7 g (typ.
) temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the abso...

Similar Datasheet

B1010 PNP Silicon Transistor - Rohm
B1011 2SB1011 - Panasonic Semiconductor
B1012 2SB1012 - Hitachi Semiconductor
B1015 2SB1015 - Toshiba Semiconductor
B1015A 2SB1015A - Toshiba Semiconductor
B1016 2SB1016 - ETC
B1016A 2SB1016A - Toshiba
B1018 2SB1018 - SavantIC
B1018A 2SB1018A - Toshiba
B1019 2SB1019 - SavantIC

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)