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2SK2611

Part Number	2SK2611
Manufacturer	WINSEMI SEMICONDUCTOR
Description	Silicon N-Channel MOSFET
Published	Dec 24, 2010
Detailed Description	www.DataSheet.in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.55Ω)@VGS=10V Ultra-low Gate ...
Datasheet	2SK2611 PDF File

Overview

www.
DataSheet.
in 2SK2611 Silicon N-Channel MOSFET Features � � � � � 11A,500V,RDS(on)(Max0.
55Ω)@VGS=10V Ultra-low Gate charge(Typical 43nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150℃) General Description This Power MOSFET is produced using Winsemi's advancedplanar stripe,VDMOS technology.
this latest technology has beenespecially designed to minimize on-state resistance, have a high rugged avalanche characteristics .
This devices is specially wellsuited for AC-DC switching power supplies, DC-DC power Converters high voltage H-bridge motor drive PWM Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS EAR dv/dt PD TJ,Tstg TL Drain Source Voltage Co...

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