DatasheetsPDF.com

PJF830

Pan Jit International
Part Number PJF830
Manufacturer Pan Jit International
Description 500V N-Channel Enhancement Mode MOSFET
Published Feb 26, 2011
Detailed Description PJP830 / PJF830 500V N-Channel Enhancement Mode MOSFET FEATURES • 4.5A , 500V, RDS(ON)=1.5Ω@VGS=10V, ID=2.5A • • • • • •...
Datasheet PDF File PJF830 PDF File

PJF830
PJF830


Overview
PJP830 / PJF830 500V N-Channel Enhancement Mode MOSFET FEATURES • 4.
5A , 500V, RDS(ON)=1.
5Ω@VGS=10V, ID=2.
5A • • • • • • Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current Specially Desigened for AC Adapter, Battery Charge and SMPS In compliance with EU RoHs 2002/95/EC Directives TO-220AB / ITO-220AB TO-220AB ITO-220AB 3S 2 1 D G 3S 12D G MECHANICAL DATA • Case: TO-220AB / ITO-220AB Molded Plastic • Terminals : Solderable per MIL-STD-750,Method 2026 INTERNAL SCHEMATIC DIAGRAM 2 Drain ORDERING INFORMATION 1 TYPE PJP830 PJF830 MARKING P830 F830 PACKAGE TO-220AB ITO-220AB PACKING 50PCS/TUBE 50PCS/TUBE Gate 3 Source Maximum RATINGS and Thermal Characteristics (TA=25OC unless otherwise noted ) PA RA ME TE R D ra i n-S o urc e Vo lta g e Ga te -S o urc e Vo lta g e C o nti nuo us D ra i n C urre nt P uls e d D ra i n C urre nt 1 ) Ma xi mum P o we r D i s s i p a ti o n D e ra ti ng F a c to r T A =2 5 O C S ymb o l V DS V GS ID ID M PD T J ,T S TG E AS R θJC R θJA PJP830 500 +3 0 4 .
5 18 87 0 .
7 PJF830 Uni ts V V 4 .
5 18 44 0 .
3 5 A A W O Op e ra ti ng J uncti o n a nd S to ra g e Te mp e r a ture Ra ng e -5 5 to +1 5 0 310 1 .
4 3 6 2 .
5 2 .
8 2 100 O C Avalanche Energy with Single Pulse IAS=4.
5A, VDD=82V, L=26.
5mH mJ C /W C /W Junction-to-Case Thermal Resistance Junction-to Ambient Thermal Resistance www.
DataSheet4U.
com O Note : 1.
Maximum DC current limited by the package PAN JIT RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE STAD-JAN.
08.
2010 PAGE .
1 PJP830 / PJF830 ELECTRICAL CHARACTERISTICS ( TA=25OC unless otherwise noted ) P a ra me te r S ymb o l Te s t C o nd i ti o n Mi n.
Typ .
Ma x.
Uni ts S ta ti c D rai n-S o urc e B re a k d own Vo ltag e B V D SS V GS (th) R D S (o n) I DSS I GS S V GS =0 V, I D =2 5 0 uA V D S =V GS , I D =2 5 0 uA VGS= 10V, I D= 2.
5A VDS=500V, VGS=0V V GS =+3 0 V, V D S =0 V 500 2 .
0 - 1.
3 - 4 .
0 1.
5 10 +1 0...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)