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VBT3045C

Vishay Siliconix
Part Number VBT3045C
Manufacturer Vishay Siliconix
Description Dual Low-Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 31, 2011
Detailed Description www.vishay.com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low ...
Datasheet PDF File VBT3045C PDF File

VBT3045C
VBT3045C


Overview
www.
vishay.
com VBT3045C Vishay General Semiconductor Dual Low-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
30 V at IF = 5.
0 A TMBS ® D2PAK (TO-263AB) K 2 1 VBT3045C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS click logo to get started FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020,  LF maximum peak of 245 °C • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection.
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