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VBT3045BP

Vishay
Part Number VBT3045BP
Manufacturer Vishay
Description Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description VBT3045BP www.vishay.com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass P...
Datasheet PDF File VBT3045BP PDF File

VBT3045BP
VBT3045BP

Overview
VBT3045BP www.
vishay.
com Vishay General Semiconductor Trench MOS Barrier Schottky Rectifier for PV Solar Cell Bypass Protection Ultra Low VF = 0.
30 V at IF = 5 A FEATURES TMBS® TO-263AB K • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C 2 • TJ 200 °C max.
in solar bypass application • Material categorization: For definitions of compliance please see www.
vishay.
com/doc?99912 1 PIN 1 PIN 2 K HEATSINK TYPICAL APPLICATIONS For use in solar cell junction box as a bypass diode for protection, using DC forward current without reverse bias.
PRIMARY CHARACTERISTCS IF(DC) VRRM ...


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