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IRFP448

Vishay Siliconix
Part Number IRFP448
Manufacturer Vishay Siliconix
Description Power MOSFET
Published May 29, 2011
Detailed Description Power MOSFET IRFP448, SiHFP448 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) 500 VGS = 10 V 84...
Datasheet PDF File IRFP448 PDF File

IRFP448
IRFP448

Overview
Power MOSFET IRFP448, SiHFP448 Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) 500 VGS = 10 V 84 Qgs (nC) 8.
4 Qgd (nC) 50 Configuration Single 0.
60 D TO-247AC S D G G S N-Channel MOSFET FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT DESCRIPTION Third Generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices.
The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-247AC IRFP448PbF SiHFP448-E3 IRFP448 SiHFP448 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C VDS VGS ID IDM EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 50 V, starting TJ = 25 °C, L = 8.
2 mH, Rg = 25 Ω, IAS = 11 A (see fig.
12).
c.
ISD ≤ 11 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d.
1.
6 mm from case.
LIMIT 500 ± 20 11 6.
6 44 1.
4 550 11 18 180 3.
5 - 55 to + 150 300d 10 1.
...


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