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2SA815

Inchange Semiconductor
Part Number 2SA815
Manufacturer Inchange Semiconductor
Description POWER TRANSISTOR
Published Jul 4, 2011
Detailed Description isc Silicon PNP Power Transistor 2SA815 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -100(V)(Min.) ·Co...
Datasheet PDF File 2SA815 PDF File

2SA815
2SA815

Overview
isc Silicon PNP Power Transistor 2SA815 DESCRIPTION ·Collector-Emitter Breakdown Voltage- :V(BR)CEO= -100(V)(Min.
) ·Complement to Type 2SC1625 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Medium power amplifier applications.
·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A IE Emitter Current-Continuous PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature 1 A 15 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SA815 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown ...


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