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2SB937A

Panasonic Semiconductor
Part Number 2SB937A
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlingto...
Datasheet PDF File 2SB937A PDF File

2SB937A
2SB937A

Overview
Power Transistors 2SB0937 (2SB937), 2SB0937A (2SB937A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1260, 2SD1260A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0±0.
3 1.
5±0.
1 Unit: mm 8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1 4.
4±0.
5 Parameter Collector-base voltage (Emitter open) 2SB0937 2SB0937A Symbol VCBO VCEO VEBO IC ICP PC Ta = 25°C Tj Tstg Rating −60 −80 −60 −80 −5 −2 −4 35 1.
3 150 −55 to +150 Unit V (6.
5) Collector-emitter voltage 2SB0937 (Base open) 2SB0937A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation V V A A W B °C °C E Conditions Min −60 −80 Typ 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.
Internal Connection C Junction temperature Storage temperature ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0937 2SB0937A 2SB0937 2SB0937A IEBO hFE1 hFE2 Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time fT ton tstg tf * Symbol 2SB0937 2SB0937A VBE ICBO ICEO VCEO Max (7.
6) Unit V IC = −30 mA, IB = 0 VCE = −4 V,IC = −2 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VCE = −4 V, IC = −1 A VCE = −4 V, IC = −2 A IC = −2 A, IB = −8 mA VCE = −10 V, IC = −0.
5 A, f = 1 MHz IC = −2 A, IB1 = −8 mA, IB2 = 8 mA VCC = −50 V −2.
8 −1 −1 −2 −2 −2 1 000 2 000 10 000 −2.
5 20 0.
4 1.
5 0.
5 V mA mA Emitter-base cutoff current (Collector open) Forward current transfer ratio mA  V MHz µs µs µs VCE(sat) Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7...


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