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2SB938A

Panasonic Semiconductor
Part Number 2SB938A
Manufacturer Panasonic Semiconductor
Description Power Transistors
Published Jul 7, 2011
Detailed Description Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.DataSheet4U.net Silicon PNP epitaxial planar type Darlingto...
Datasheet PDF File 2SB938A PDF File

2SB938A
2SB938A

Overview
Power Transistors 2SB0938 (2SB938), 2SB0938A (2SB938A) www.
DataSheet4U.
net Silicon PNP epitaxial planar type Darlington For power amplification and switching Complementary to 2SD1261, 2SD1261A ■ Features • High forward current transfer ratio hFE • High-speed switching • N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
0±0.
3 1.
5±0.
1 Unit: mm 8.
5±0.
2 6.
0±0.
2 3.
4±0.
3 1.
0±0.
1 4.
4±0.
5 ■ Absolute Maximum Ratings TC = 25°C Parameter Collector-base voltage (Emitter open) 2SB0938 2SB0938A VCEO VEBO IC ICP PC Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol VCBO Rating −60 −80 −60 −80 −5 −4 −8 40 1.
3 150 −55 to +150 °C °C V A A W V Unit V (6.
5) Collector-emitter voltage 2SB0938 (Base open) 2SB0938A Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation 1: Base 2: Collector 3: Emitter N-G1 Package Note) Self-supported type package is also prepared.
Internal Connection C B ■ Electrical Characteristics TC = 25°C ± 3°C Parameter Collector-emitter voltage (Base open) Base-emitter voltage Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) 2SB0938 2SB0938A 2SB0938 2SB09378 IEBO hFE1 hFE2 * Collector-emitter saturation voltage VCE(sat) fT ton tstg tf ICEO 2SB0938 2SB0938A VBE ICBO VCE = −3 V,IC = −3 A VCB = −60 V,IE = 0 VCB = −80 V,IE = 0 VCE = −30 V,IB = 0 VCE = −40 V,IB = 0 VEB = −5 V,IC = 0 VCE = −3 V, IC = −0.
5 A VCE = −3 V, IC = −3 A IC = −3 A, IB = −12 mA IC = −5 A, IB = −20 mA Transition frequency Turn-on time Strage time Fall time VCE = −10 V, IC = −0.
5 A, f = 1 MHz IC = −3 A, IB1 = −12 mA, IB2 = 12 mA VCC = −50 V 15 0.
3 2 0.
5 1 000 2 000 Symbol VCEO Conditions IC = −30 mA, IB = 0 Min −60 −80 Typ E Max Unit V −2.
5 −200 −200 −500 −500 −2 10 000 −2 −4 MHz µs µs µs V mA  µA (7.
6) V µA Emitter-base cutoff current (Collector open) Forward current transfer ratio Note) 1.
Measuri...


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