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FDS6673BZ

Fairchild Semiconductor
Part Number FDS6673BZ
Manufacturer Fairchild Semiconductor
Description P-Channel MOSFET
Published Sep 29, 2011
Detailed Description www.DataSheet.co.kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V...
Datasheet PDF File FDS6673BZ PDF File

FDS6673BZ
FDS6673BZ

Overview
www.
DataSheet.
co.
kr FDS6673BZ P-Channel PowerTrench® MOSFET January 2006 FDS6673BZ P-Channel PowerTrench® MOSFET -30V, -14.
5A, 7.
8mΩ General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize the on-state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features „ Max rDS(on) = 7.
8mΩ, VGS = -10V, ID = -14.
5A „ Max rDS(on) = 12mΩ, VGS = -4.
5V, ID = -12A „ Extended VGS range (-25V) for battery applications „ HBM ESD protection level of 6.
5kV typical (note 3) „ High performance trench techno...


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