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2SB1606


Part Number 2SB1606
Manufacturer Panasonic Semiconductor
Title Silicon PNP Transistor
Description Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 ...
Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package with outstanding insulation, which can be installed to the heat sink with one...

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2SB1602 : .

2SB1603 : Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1603A Emi.

2SB1603 : ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1603 VCBO Collector-base voltage 2SB1603A 2SB1603 VCEO Collector-emitter voltage 2SB1603A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open collector Open base -40 -5 -4 -8 2 W V A A Open emitter -50 -20 V CONDITIONS MAX -40 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product .

2SB1603 : ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -2A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -4 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ.

2SB1603A : Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features q q q 15.0±0.3 3.0±0.2 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1603 2SB1603A 2SB1603 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) Ratings –40 –50 –20 –40 –5 –8 –4 25 2 150 –55 to +150 Unit V 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB1603A Emi.

2SB1603A : ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1603 VCBO Collector-base voltage 2SB1603A 2SB1603 VCEO Collector-emitter voltage 2SB1603A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 25 150 -55~150 Open collector Open base -40 -5 -4 -8 2 W V A A Open emitter -50 -20 V CONDITIONS MAX -40 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product .

2SB1604 : Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB16.

2SB1604 : ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.6V(Max.)@IC= -10A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-voltage switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -20 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ .

2SB1604 : ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1604 VCBO Collector-base voltage 2SB1604A 2SB1604 VCEO Collector-emitter voltage 2SB1604A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open collector Open base -40 -5 -10 -20 2 W V A A Open emitter -50 -20 V CONDITIONS MAX -40 V UNIT SavantIC Semiconductor www.DataSheet4U.com Produc.

2SB1604A : Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 15.0±0.3 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SB1604 2SB1604A 2SB1604 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg (TC=25˚C) 13.7–0.2 +0.5 4.1±0.2 8.0±0.2 Solder Dip 3.0±0.2 Low collector to emitter saturation voltage VCE(sat) High-speed switching Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw Ratings –40 –50 –20 –40 –5 –20 –10 40 2 150 –55 to +150 Unit V 1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4 2.6±0.1 0.7±0.1 emitter voltage 2SB16.

2SB1604A : ·With TO-220F package ·Low collector saturation voltage ·High speed switching APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1604 VCBO Collector-base voltage 2SB1604A 2SB1604 VCEO Collector-emitter voltage 2SB1604A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 40 150 -55~150 Open collector Open base -40 -5 -10 -20 2 W V A A Open emitter -50 -20 V CONDITIONS MAX -40 V UNIT SavantIC Semiconductor www.DataSheet4U.com Produc.

2SB1605 : Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.1±0.2 8.0±0.2 Solder Dip s Absolute Maximum Ratings 15.0±0.3 3.0±0.2 13.7–0.2 +0.5 V 1.2±0.15 1.45±0.15 0..

2SB1605 : ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1605 VCBO Collector-base voltage 2SB1605A 2SB1605 VCEO Collector-emitter voltage 2SB1605A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS MAX -60 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product.

2SB1605 : ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.2V(Max.)@IC= -3A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-freauency power switching and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC.

2SB1605A : Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C) Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 4.1±0.2 8.0±0.2 Solder Dip s Absolute Maximum Ratings 15.0±0.3 3.0±0.2 13.7–0.2 +0.5 V 1.2±0.15 1.45±0.15 0..

2SB1605A : ·With TO-220F package ·Low collector saturation voltage ·Good linearity of hFE APPLICATIONS ·For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1605 VCBO Collector-base voltage 2SB1605A 2SB1605 VCEO Collector-emitter voltage 2SB1605A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS MAX -60 V UNIT SavantIC Semiconductor www.DataSheet4U.com Product.




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