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2SB1659

Sanken electric
Part Number 2SB1659
Manufacturer Sanken electric
Description Silicon PNP Transistor
Published Mar 22, 2005
Detailed Description (70Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1659 –110 –110 –5 –6 –...
Datasheet PDF File 2SB1659 PDF File

2SB1659
2SB1659


Overview
(70Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1659 –110 –110 –5 –6 –1 50(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1659 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=–110V VEB=–5V IC=–30mA VCE=–4V, IC=–5A IC=–5A, IB=–5mA IC=–5A, IB=–5mA VCE=–12V, IE=0.
5A VCB=–10V, f=1MHz 2SB1659 –100max –100max –110min 5000min∗ –2.
5max –3.
0max 100typ 110typ V V MHz pF 12.
0min 4.
0max B Equivalent circuit C Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2589) Application : Audio, Series Regulator and General Purpose (Ta=25°C) Unit External Dimensions MT-25(TO220) 3.
0±0.
2 10.
2±0.
2 4.
8±0.
2 2.
0±0.
1 µA µA 16.
0±0.
7 V 8.
8±0.
2 a b ø3.
75±0.
2 1.
35 0.
65 +0.
2 -0.
1 2.
5 B C E 2.
5 1.
4 ∗hFE Rank O(5000 to 12000), P(6500 to 20000), Y(15000 to 30000) sTypical Switching Characteristics (Common Emitter) VCC (V) –30 RL (Ω) 6 IC (A) –5 VBB1 (V) –10 VBB2 (V) 5 IB1 (mA) –5 IB2 (mA) 5 ton (µs) 1.
1typ tstg (µs) 3.
2typ tf (µs) 1.
1typ Weight : Approx 2.
0g a.
Type No.
b.
Lot No.
I C – V CE Characteristics (Typical) A m –1 V CE ( sa t ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V) –3 I C – V BE Temperature Characteristics (Typical) –6 (V CE =–4V) –6 A –5m –0 .
5m A –0 .
4m A –0 .
3 m A Collector Current I C (A) –4 Collector Current I C (A) –0.
2m A –2 –5A –4 Tem emp se (Ca 125 25˚C 0 0 –2 –4 –6 0 –0.
1 –0.
5 –1 –5 –10 Base Current I B (mA) –50 –100 0 0 –1 –30 ˚C ( Cas ˚C (Ca seT –2 –1 –2 eT e mp) I B =–0.
1mA I C =–3A p) ) –2 –3 Collector-Emitter Voltage V C E (V) Base-Emittor Voltage V B E (V) h FE – I C Characteristics (Typical) (V C E =–4V) 40000 D C Cur r ent Gai n h F E h FE – I C Temperature Characteristics (Typical) (V C E =–4V) 50000 125˚C θ j-a – t Characteristics θ j- a ( ˚C/W) Transient Thermal Resistance 5 DC Cur rent Gain h FE Typ 10000 5000 25˚C 10000 5000 –30...


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