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V20120C

Vishay
Part Number V20120C
Manufacturer Vishay
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Published Mar 28, 2012
Detailed Description New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier S...
Datasheet PDF File V20120C PDF File

V20120C
V20120C

Overview
New Product V20120C, VF20120C, VB20120C & VI20120C Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.
54 V at IF = 5 A TMBS ® TO-220AB ITO-220AB FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
1 2 3 VI20120C 2 V20120C PIN 1 PIN 3 PIN 2 CASE 3 1 VF20120C PIN 1 PIN 3 PIN 2 2 3 1 TO-263AB K K TO-262AA 2 1 VB20120C PIN 1 PIN 2 K HEATSINK MECHANICAL DATA www.
DataSheet.
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kr PIN 1 PIN 3 PIN 2 K PRIMARY CHARACTERISTICS IF(AV) VRRM IFSM VF at IF = 10 A TJ max.
2 x 10 A 120 V 120 A 0.
64 V 150 °C Case: TO-220AB, ITO-220AB, TO-263AB and TO-262AA Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode SYMBOL VRRM IF(AV) IFSM EAS IRRM dV/dt VAC TJ, TSTG V20120C VF20120C VB20120C VI20120C UNIT V A A mJ A V/µs V °C 120 20 10 120 80 0.
5 10 000 1500 - 40 to + 150 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH per diode Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C per diode Voltage rate of change...


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