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2N80

Unisonic Technologies
Part Number 2N80
Manufacturer Unisonic Technologies
Description 800V N-CHANNEL POWER MOSFET
Published Nov 6, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2N80 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 2N80 is an N-ch...
Datasheet PDF File 2N80 PDF File

2N80
2N80

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2N80 2A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 2N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers planar stripe and DMOS technology.
This technology is specialized in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 2N80 is universally applied in high efficiency switch mode power supply.
„ FEATURES * RDS(on) = 6.
3Ω @VGS = 10 V * High switching speed „ SYMBOL 2.
Drain www.
DataSheet.
net/ 1.
Gate 3.
Source „ ORDERING INFORMATION Package TO-220F TO-251 TO-252 TO-252 S: Source 1 G G G G Pin Assignment 2 D D D D 3 S S S S Packing Tube Tube Tape Reel Tube Ordering Number Lead Free Halogen Free 2N80L-TF3-T 2N80G-TF3-T 2N80L-TM3-R 2N80G-TM3-R 2N80L-TN3-R 2N80G-TN3-R 2N80L-TN3-T 2N80G-TN3-T Note: Pin Assignment: G: Gate D: Drain www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-480.
C Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 2N80 „ Power MOSFET ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 2.
4 A 2.
4 A Continuous ID Drain Current Pulsed (Note 1) IDM 9.
6 A 180 mJ Single Pulsed (Note 2) EAS Avalanche Energy Repetitive (Note 1) EAR 8.
5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.
0 V/ns TO-220F 24 Power Dissipation TO-251 PD W TO-252 43 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Notes: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
L = 59mH, IAS = 2.
4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3.
ISD ≤ 2.
4A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device ope...


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