DatasheetsPDF.com

3N60A

Unisonic Technologies
Part Number 3N60A
Manufacturer Unisonic Technologies
Description 600V N-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 3N60A 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N60A is a hig...
Datasheet PDF File 3N60A PDF File

3N60A
3N60A



Overview
UNISONIC TECHNOLOGIES CO.
, LTD 3N60A 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET The UTC 3N60A is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
This power MOSFET is usually used in the high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
„ FEATURES * VDS = 600V, ID = 3A * RDS(ON) = 3.
6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.
5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL www.
DataSheet.
net/ 2.
Drain 1.
Gate 3.
Source „ ORDERING INFORMATION Package TO-220F TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S Packing Tube Tape Reel Tube Ordering Number Lead Free Halogen Free 3N60AL-TF3-T 3N60AG-TF3-T 3N60AL-TN3-R 3N60AG-TN3-R 3N60AL-TN3-T 3N60AG-TN3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.
unisonic.
com.
tw Copyright © 2011 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R502-610.
A Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 3N60A „ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.
0 A Continuous Drain Current ID 3.
0 A Pulsed Drain Current (Note 2) IDM 12 A Single Pulsed (Note 3) EAS 200 mJ Avalanche Energy 7.
5 mJ Repetitive (Note 2) EAR Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns TO-220F 34 Power Dissipation PD W TO-252 50 Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operatio...



Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)