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3N60Z

Unisonic Technologies
Part Number 3N60Z
Manufacturer Unisonic Technologies
Description 600V N-CHANNEL POWER MOSFET
Published Nov 9, 2012
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 3N60Z 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET 1 The UTC 3N60Z is a ...
Datasheet PDF File 3N60Z PDF File

3N60Z
3N60Z


Overview
UNISONIC TECHNOLOGIES CO.
, LTD 3N60Z 3A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION Power MOSFET 1 The UTC 3N60Z is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.
TO-220F „ FEATURES * RDS(ON) = 3.
6Ω @VGS = 10 V * Ultra low gate charge ( typical 10 nC ) * Low reverse transfer capacitance ( CRSS = typical 5.
5 pF ) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness „ SYMBOL 2.
Drain www.
DataSheet.
net/ 1.
Gate 3.
Source „ ORDERING INFORMATION Package TO-220F Pin Assignment 1 2 3 G D S Packing Tube Ordering Number Lead Free Halogen Free 3N60ZL-TF3-T 3N60ZG-TF3-T Note: Pin Assignment: G: Gate D: Drain S: Source www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 8 QW-R502-744.
A Datasheet pdf - http://www.
DataSheet4U.
co.
kr/ 3N60Z „ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified) Power MOSFET PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 600 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 3.
0 A Continuous Drain Current ID 3.
0 A Pulsed Drain Current (Note 2) IDM 12 A 200 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 7.
5 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.
5 V/ns Power Dissipation PD 34 W Junction Temperature TJ +150 ℃ Operating Temperature TOPR -55 ~ +150 ℃ Storage Temperature TSTG -55 ~ +150 ℃ Note: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width limited by maximum junction temperature 3.
L = 64mH, IAS = 2.
4A, VDD ...


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